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| savantic semiconductor product specification silicon npn power transistors 2SD627 description with to-3 package high voltage,high speed applications for use in horizontal deflection output stages for color tv receivers pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 6 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -45~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD627 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 600 v v cesat collector-emitter saturation voltage i c =2.5a; i b =0.6a 10 v v besat base-emitter saturation voltage i c =2.5a; i b =0.6a 1.6 v i cbo collector cut-off current v cb =1000v; i e =0 50 a i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe dc current gain i c =2a ; v ce =10v 5 25 t f fall time i cp =2.5a 1.0 s savantic semiconductor product specification 3 silicon npn power transistors 2SD627 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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